Diodes formed by laser drilling and diffusion
- 1 December 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (12) , 9154-9164
- https://doi.org/10.1063/1.330427
Abstract
Novel three-dimensional diode arrays have been produced in semiconductor wafers by a two-step process involving laser drilling and solid state diffusion. Holes are first produced through the wafer by laser drilling. Under suitable conditions, little or no damage to the wafer results from laser drilling. Then cylindrical p-n junctions around the laser-drilled holes are formed by diffusing an impurity into the wafer from a source in contact with the walls of the laser-drilled holes. Three applications of drilled diodes are discussed: microchannel interconnections through wafers, isolation grids, and radiation imagers.This publication has 19 references indexed in Scilit:
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