Lateral Seeding of Silicon-On-Insulator Using an Elliptical Laser Beam: A Comparison of Scanning Methods
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Use of selective annealing for growing very large grain silicon on insulator filmsApplied Physics Letters, 1982
- Laser-induced lateral epitaxial growth of silicon over silicon dioxide with locally varied encapsulationApplied Physics Letters, 1982
- Seeded oscillatory growth of Si over SiO2 by cw laser irradiationApplied Physics Letters, 1982
- The use of beam shaping to achieve large-grain cw laser-recrystallized polysilicon on amorphous substratesApplied Physics Letters, 1981
- Single Crystal Silicon‐on‐Oxide by a Scanning CW Laser Induced Lateral Seeding ProcessJournal of the Electrochemical Society, 1981
- Bird's Beak Configuration and Elimination of Gate Oxide Thinning Produced during Selective OxidationJournal of the Electrochemical Society, 1980
- A monolithic integrated circuit fabricated in laser-annealed polysiliconIEEE Transactions on Electron Devices, 1980