Vergleich verschiedener planarer Passivierungstechniken für Halbleiterleistungsbauelemente

This publication has 11 references indexed in Scilit:

• Lateral HVIC with 1200-V bipolar and field-effect devices
  IEEE Transactions on Electron Devices, 1986
• Planar termination for high-voltage p-n junctions
  Solid-State Electronics, 1986
• Junction termination extension for near-ideal breakdown voltage in p-n junctions
  IEEE Transactions on Electron Devices, 1986
• Variation of lateral doping as a field terminator for high-voltage power devices
  IEEE Transactions on Electron Devices, 1986
• Computer study of a high-voltage a p-π-n--n+diode and comparison with a field-limiting ring structure
  IEEE Transactions on Electron Devices, 1986
• A proposed planar junction structure with near-ideal breakdown characteristics
  IEEE Electron Device Letters, 1985
• Breakdown voltage optimization of silicon p-π-v planar junction diodes
  IEEE Transactions on Electron Devices, 1984
• Blocking capability of planar devices with field limiting rings
  Solid-State Electronics, 1983
• Increased avalanche breakdown voltage and controlled surface electric fields using a junction termination extension (JTE) technique
  IEEE Transactions on Electron Devices, 1983
• Theory and breakdown voltage for planar devices with a single field limiting ring
  IEEE Transactions on Electron Devices, 1977