Continuous-Wave Operation at 250 K of InGaN Multiple Quantum Well Laser Diodes Grown on 6H-SiC with Vertical Conducting Structure
- 1 October 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (10B) , L1205
- https://doi.org/10.1143/jjap.37.l1205
Abstract
We demonstrated continuous-wave operation at 250 K of InGaN multiple quantum well laser diodes that were grown on 6H-SiC and had a vertical conducting structure in which p-type and n-type electrodes were formed at the top and the bottom of the chip, respectively. The threshold current, threshold voltage, and threshold current density were 380 mA, 12.6 V, and 12 kA/cm2, respectively. The laser diodes were operated at room temperature with a duty ratio up to about 20% at a repetition frequency of 1 kHz.Keywords
This publication has 15 references indexed in Scilit:
- InGaN Laser Diode Grown on 6H–SiC Substrate Using Low-Pressure Metal Organic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiCElectronics Letters, 1997
- InGaN Laser Diodes Grown on SiC Substrate Using Low-Pressure Metal-Organic Vapor Phase EpitaxyMRS Proceedings, 1997
- Status of Nitride Based Light Emitting and Laser Diodes on SiCMRS Proceedings, 1997
- Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire SubstratesJapanese Journal of Applied Physics, 1996
- Optical studies of GaN and GaN/AlGaN heterostructures on SiC substratesApplied Physics Letters, 1996
- Shortest wavelength semiconductor laser diodeElectronics Letters, 1996
- InGaN multi-quantum-well structure laser diodes grown on MgAl2O4 substratesApplied Physics Letters, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Fabrication and Properties of AlGaN/GaInN Double Heterostructure Grown on 6H-SiC(0001)SiMRS Proceedings, 1995