Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells
Open Access
- 1 January 1999
- journal article
- Published by Springer Nature in MRS Internet Journal of Nitride Semiconductor Research
- Vol. 4 (1)
- https://doi.org/10.1557/s1092578300000636
Abstract
Photoluminescence spectra were measured for 100 Å wurtzite GaN AlGaN modulation doped quantum wells. Three well-resolved peaks originate from the quantum well. The theoretically calculated confinement energies have been compared to the experimental energy positions and found to be in good agreement with the data, assuming that the piezoelectric field is largely screened by the electron gas. The highest energy transition may originate from the Fermi edge, consistent with the temperature dependence of the photoluminescence. Decay times for the different transitions indicate that the photoexcited holes are localized.Keywords
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