Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition
- 15 October 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (8) , 5136-5138
- https://doi.org/10.1063/1.359745
Abstract
Silicon carbide (SiC) films have been grown on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition, using propane, silane, and hydrogen. X‐ray photoelectron spectroscopy data confirm that the films are stoichiometric SiC, with no major impurities. X‐ray diffraction and transmission electron microscopy (TEM) data indicate that the films are single‐crystalline cubic polytype (3C) across the 4 in. substrates. With the exception of slip lines near the edge of the wafers, the films appear featureless when observed optically. The nitrogen concentration, as determined by secondary ion mass spectroscopy, is 4×1018 cm3. Cross‐sectional TEM images show a fairly rough, void‐free interface.This publication has 7 references indexed in Scilit:
- Characterization of the buffer layer in SiC heteroepitaxyApplied Surface Science, 1993
- Characterization of n-type beta -SiC as a piezoresistorIEEE Transactions on Electron Devices, 1993
- Mechanical properties of 3C silicon carbideApplied Physics Letters, 1992
- Epitaxial growth of beta -SiC on Si by RTCVD with C/sub 3/H/sub 8/ and SiH/sub 4/IEEE Transactions on Electron Devices, 1992
- High-voltage 6H-SiC p-n junction diodesApplied Physics Letters, 1991
- High-temperature depletion-mode metal-oxide-semiconductor field-effect transistors in beta-SiC thin filmsApplied Physics Letters, 1987
- Growth and Characterization of Cubic SiC Single‐Crystal Films on SiJournal of the Electrochemical Society, 1987