High Temperature Characterization of 4H-SiC Bipolar Junction Transistors

15 October 2006

journal article
Published by Trans Tech Publications, Ltd. in Materials Science Forum

Vol. 527-529, 1437-1440
https://doi.org/10.4028/www.scientific.net/msf.527-529.1437

Abstract

This paper summarizes the recent demonstration of 3200 V, 10 A BJT devices with a high common emitter current gain of 44 in the linear region, and a specific on-resistance of 8.1 mΩ- cm2 (10 A at 0.90 V with a base current of 350 mA and an active area of 0.09 cm2). The onresistance increases to 40 mΩ-cm2 at 350°C, while the DC current gain decreases to 30. A sharp avalanche behavior was observed with a leakage current of 10 μA at a collector voltage of 3.2 kV.

Keywords

This publication has 7 references indexed in Scilit:

4 kV 4H-SiC epitaxial emitter bipolar junction transistors
IEEE Electron Device Letters, 2005
1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs
Materials Science Forum, 2005
A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer
Materials Science Forum, 2004
Recent progress in SiC bipolar junction transistors
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2004
High current gain 4H-SiC npn bipolar junction transistors
IEEE Electron Device Letters, 2003
Factors limiting the current gain in high-voltage 4H-SiC npn-BJTs
Solid-State Electronics, 2002
1800 V NPN bipolar junction transistors in 4H-SiC
IEEE Electron Device Letters, 2001