Persistent decrease of dark conductivity due to illumination in AlGaAs/GaAs modulation-doped heterostructures
- 1 November 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (9) , 5596-5601
- https://doi.org/10.1063/1.355285
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Observation of persistent negative photoconductivity effect in AlGaAs/GaAs modulation-doped structuresPhysical Review Letters, 1991
- Deep donor levels (D X centers) in III-V semiconductorsJournal of Applied Physics, 1990
- Mechanism of kink effect related to negative photoconductivity in AlGaAs/GaAs HEMTsElectronics Letters, 1989
- Transport and persistent photoconductivity in atomic-planar-doped GaAs-AlAs/GaAs heterostructuresJournal of Applied Physics, 1988
- Negative photoconductivity in high electron mobility transistorsApplied Physics Letters, 1987
- Persistent photoconductivity in AlGaAs/GaAs modulation doped layers and field effect transistors: A reviewSolid-State Electronics, 1986
- Factors influencing doping control and abrupt metallurgical transitions during atmospheric pressure MOVPE growth of AlGaAs and GaAsJournal of Crystal Growth, 1984
- A new technique for gettering oxygen and moisture from gases used in semiconductor processingApplied Physics Letters, 1982
- Fundamentals of junction measurements in the study of deep energy levels in semiconductorsJournal of Physics E: Scientific Instruments, 1981
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977