High-temperature electron transport properties in AlGaN/GaN heterostructures
- 10 September 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (11) , 1634-1636
- https://doi.org/10.1063/1.1400779
Abstract
Electron transport properties in the Al 0.15 Ga 0.85 N/GaN heterostructurefield effect transistors(HFETs) have been examined from room temperature up to 400 ° C . The temperature dependencies of the two-dimensional electron gas(2DEG)mobility have been systematically measured for the samples with different 2DEG densities. The 2DEGmobility has been shown to decrease with increasing the temperature, with the lower decrease ratio at higher temperatures, and moreover, shown to be less dependent on the 2DEG density at higher temperatures. These features well agree with those of the longitudinal optical phonon-limited mobilitytheoretically predicted, although the effect of alloy and interface scattering should further be examined and analyzed. The observed 2DEGmobilities at 400 ° C were as high as from 100 to 120 cm 2 /V s , directly providing the evidence for suitability of the HFET of this material system for high-temperature applications. Moreover, Si-doped Al 0.15 Ga 0.85 N single layer has been shown to exhibit a relatively high bulk mobility of 50 cm 2 /V s at 400 ° C , suggesting that AlGaN is attractive as the channel material when higher-voltage and higher-temperature device operation is required.Keywords
This publication has 14 references indexed in Scilit:
- Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n-type GaN epilayersApplied Physics Letters, 2000
- Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphireApplied Physics Letters, 2000
- Superior Pinch-Off Characteristics at 400°C in AlGaN/GaN Heterostructure Field Effect TransistorsJapanese Journal of Applied Physics, 1999
- High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substratesIEEE Electron Device Letters, 1999
- GaN microwave electronicsIEEE Transactions on Microwave Theory and Techniques, 1998
- High Al-content AlGaN/GaN MODFETs for ultrahigh performanceIEEE Electron Device Letters, 1998
- High-temperature performance of AlGaN/GaN HFETs on SiC substratesIEEE Electron Device Letters, 1997
- AlGaN/GaN HEMTs grown on SiC substratesElectronics Letters, 1997
- Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistorsIEEE Electron Device Letters, 1996
- Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °CApplied Physics Letters, 1995