YAG laser assisted etching for releasing silicon micro structure
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
YAG laser assisted etching techniques were developed and investigated for releasing silicon micro structures. HCl, SF/sub 6/ etc., which produce volatile exhaust, were used as etching gas at atmospheric pressure. The YAG laser assisted etching was applied to fabricate an electrostatic microactuator, a resonating sensor and accelerometers. This resistless dry etching can be applied to three-dimensional structures.<>Keywords
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