Modeling of nMOS transistors for simulation of hot-carrier-induced device and circuit degradation
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 11 (2) , 235-246
- https://doi.org/10.1109/43.124402
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
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