The diffusion of Mn in CdTe
- 1 July 1995
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 10 (7) , 952-958
- https://doi.org/10.1088/0268-1242/10/7/009
Abstract
The diffusivity of Mn in CdTe, D(Mn), has been measured between 500 and 800 degrees C under saturated Cd and Te conditions. The variation of D(Mn) with Cd partial pressure was measured at 600 degrees C. Between 500 and 800 degrees C. D(Mn)=(22.5/sub //x3.30)exp((-(2.35+or-0.09) eV/kT)) cm2 s-1 for saturated Te, and between 600 and 800 degrees C for saturated Cd D(Mn)=(1.12/sub //x9.12)*103exp(-(2.76+or-0.18) eV/kT) cm2 s-1. These results are consistent with those at 600 degrees C which show D(Mn) to increase with decreasing Cd partial pressure. It is argued that the observed features of D(Mn) can be best accounted for in terms of a VCd" diffusion mechanism.Keywords
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