Measurement of linewidth enhancement factor in self-assembled quantum dot semiconductor lasers emitting at 1310 nm
- 1 April 2004
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 40 (7) , 428-430
- https://doi.org/10.1049/el:20040270
Abstract
Measurements of the linewidth enhancement factor (also termed the α-parameter) for quantum dot semiconductor lasers emitting at 1310 nm in both single and multiple transverse modes are presented. Values between 1.5 and 3.0 were measured depending on the device length. In addition, its spectral dependence within the inhomogeneously broadened ground and excited state is investigated.Keywords
This publication has 9 references indexed in Scilit:
- Feedback sensitivity of 1.3 µm InAs/GaAs quantum dot lasersElectronics Letters, 2003
- Linewidth enhancement factor and near-field pattern in tunnel injection In 0.4 Ga 0.6 As self-assembled quantum dot lasersElectronics Letters, 2003
- Complete suppression of filamentation and superior beam quality in quantum-dot lasersApplied Physics Letters, 2003
- Polarisation-maintaining, harmonically modelocked soliton fibre laser with repetition rate stabilisation using optical pumping of saturable Bragg reflectorElectronics Letters, 2002
- Gain and linewidth enhancement factor in InAs quantum-dot laser diodesIEEE Photonics Technology Letters, 1999
- Minimization of the linewidth enhancement factor in compressively strained semiconductor lasersIEEE Photonics Technology Letters, 1999
- Gain, refractive index, and /spl alpha/-parameter in InGaAs-GaAs SQW broad-area lasersIEEE Photonics Technology Letters, 1996
- Low threshold, large
T
o
injectionlaser emissionfrom (InGa)As quantum dotsElectronics Letters, 1994
- Gain spectra in GaAs double−heterostructure injection lasersJournal of Applied Physics, 1975