Linewidth enhancement factor and near-field pattern in tunnel injection In 0.4 Ga 0.6 As self-assembled quantum dot lasers
- 2 October 2003
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 39 (20) , 1443-1445
- https://doi.org/10.1049/el:20030944
Abstract
Measurements of ultra-low linewidth enhancement factor in ridge-waveguide tunnel injection In0.4Ga0.6As/GaAs self-assembled quantum dot lasers have been made and the results compared with similar quantum well lasers. Values of α∼3.8 were measured in the quantum well lasers, and α was ≤0.7 in the quantum dot lasers. The consequent suppression of filamentation in the quantum dot devices has also been observed.Keywords
This publication has 12 references indexed in Scilit:
- Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasersIEEE Journal of Quantum Electronics, 2003
- Complete suppression of filamentation and superior beam quality in quantum-dot lasersApplied Physics Letters, 2003
- Filamentation and linewidth enhancement factor in InGaAs quantum dot lasersApplied Physics Letters, 2002
- Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperatureApplied Physics Letters, 2002
- Gain, refractive index change, and linewidth enhancement factor in broad-area GaAs and InGaAs quantum-well lasersIEEE Journal of Quantum Electronics, 2001
- Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasersApplied Physics Letters, 2001
- Gain and linewidth enhancement factor in InAs quantum-dot laser diodesIEEE Photonics Technology Letters, 1999
- Enhanced modulation bandwidth (20 GHz) of In/sub 0.4/Ga/sub 0.6/As-GaAs self-organized quantum-dot lasers at cryogenic temperatures: role of carrier relaxation and differential gainIEEE Photonics Technology Letters, 1998
- Gain and differential gain of single layer InAs/GaAs quantum dot injection lasersApplied Physics Letters, 1996
- Gain spectra in GaAs double−heterostructure injection lasersJournal of Applied Physics, 1975