TEM observation of FIB induced damages in Ni2Si/Si thin films
- 19 May 1997
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 127-128, 98-101
- https://doi.org/10.1016/s0168-583x(96)00859-2
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- In Situ Microlithography of Si and GaAs by a Focused Ion Beam in a 200 keV TEMJournal of Electron Microscopy, 1996
- Radiation effects of focused ion beam microfabrication on Ni disilicide thin films by in situ transmission electron microscopyApplied Physics Letters, 1996
- Focused-ion-beam implantation of Ga in elemental and compound semiconductorsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Focused ion beam direct deposition of superconductive thin filmApplied Physics Letters, 1994
- CoSi2 microstructures by means of a high current focused ion beamJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Layer structure evaluation of multilayer x-ray mirror by combination of focused ion beam etching and transmission electron microscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- In-situ transmission electron microscopy of NiSi2 formation by molecular beam epitaxySurface Science, 1989
- Radiation induced precipitation in nickel silicon solid solutions: Dose rate effectsScripta Metallurgica, 1977
- Kristallstruktur von Ni31Si12Acta Crystallographica Section B: Structural Science, Crystal Engineering and Materials, 1971
- COMPOUNDS OF THE TYPE M5X2: Pd5As2, Ni5Si2, AND Ni5P2Canadian Journal of Chemistry, 1964