In situ metalorganic vapor phase epitaxy control of GaAs/AlAs Bragg reflectors by laser reflectometry at 514 nm

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Abstract
In situ reflectometry with a 514‐nm laser beam was used to monitor AlAs and GaAs layer thicknesses grown by metalorganic vapor phase epitaxy. The effective optical indices of these materials have been calibrated at the growth temperature by using an original method based on ex situ double crystal x‐ray diffraction measurement. According to these measured indices, the in situ laser reflectometry at 514 nm appears to be well suited for a real‐time thickness control of the GaAs/AlAs based Bragg reflectors. Finally, Bragg reflectors centered at 980 nm have been grown using the reflectometry at 514 nm. X‐ray diffraction and reflectivity measurements performed on these reflectors confirm a 1% reproducibility and accuracy of the wavelength stop band center.