Hydrogen-assisted pulsed-laser deposition of epitaxial CeO2 films on (001)InP
- 7 January 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (1) , 106-108
- https://doi.org/10.1063/1.1431696
Abstract
We report on the growth of epitaxial CeO 2 on (001) InP using hydrogen-assisted pulsed-laser deposition. Epitaxy is achieved via laser ablation of a CeO 2 target in the presence of molecular hydrogen that is introduced during nucleation to reduce native In 2 O 3 from the InPsurface.X-ray diffraction scans confirm a cube-on-cube epitaxial relationship between the oxide film and the InP substrate. Rapid heating to the deposition temperature proved important in avoiding significant decomposition of the InPsurface prior to film growth. This result should enable the integration of electronic oxide functionality with InP-based semiconductor technologies, and provide a means to explore InP metal–oxide–semiconductor field-effect transistor structures.Keywords
This publication has 20 references indexed in Scilit:
- Gd 2 O 3 / GaN metal-oxide-semiconductor field-effect transistorApplied Physics Letters, 2000
- Hydrogen-assisted pulsed-laser deposition of (001)CeO2 on (001) GeApplied Physics Letters, 2000
- Epitaxial growth of Y-stabilised zirconia films on (100)InP substrates by pulsed laser depositionJournal of Crystal Growth, 2000
- Rayleigh crosstalk in long cascades of distributedunsaturated Raman amplifiersElectronics Letters, 1999
- Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide PassivationScience, 1999
- Crystalline Oxides on Silicon: The First Five MonolayersPhysical Review Letters, 1998
- Room-Temperature Epitaxial Growth of CeO2 Thin Films on Si(111) Substrates for Fabrication of Sharp Oxide/Silicon InterfaceJapanese Journal of Applied Physics, 1995
- Thermodynamic Stability of Binary Oxides in Contact with SiliconMRS Proceedings, 1995
- Pulsed laser deposition of epitaxial silicon/h-Pr2O3/silicon heterostructuresApplied Physics Letters, 1993
- Growth of indium phosphide films from In and P2 beams in ultra-high vacuumJournal of Physics D: Applied Physics, 1974