GaAs (110)–oxygen interaction: A study of electronic properties
- 1 September 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (5) , 1730-1734
- https://doi.org/10.1063/1.337266
Abstract
The modifications of the electronic properties of cleaved GaAs (110) surfaces induced by the oxygen adsorption have been studied by contact potential difference measurement. The oxygen exposure induces acceptor and donor surface states which pin the surface Fermi level at approximately 0.45 and 0.7 eV above the valence band for n- and p-doped samples, respectively. Noticeable modifications Δχ of the electronic affinity are also produced. The features of the states and the possible origins of Δχ are discussed.This publication has 21 references indexed in Scilit:
- Oxidation of GaAs(110): New results and modelsPhysical Review B, 1984
- The oxidation of GaAs(110): A reevaluationJournal of Vacuum Science & Technology B, 1984
- Initial oxidation of GaAs(110): A core-level photoemission studyPhysical Review B, 1984
- UV photoemission study of low temperature oxygen adsorption on GaAs(110)Journal of Vacuum Science & Technology B, 1983
- Photoemission studies of the interaction of oxygen with GaAs(110)Physical Review B, 1982
- The GaAs(110)-oxygen interaction: A LEED analysis. IISurface Science, 1980
- Oxidation of ordered and disordered GaAs(110)Journal of Vacuum Science and Technology, 1979
- The surface electronic structure of 3–5 compounds and the mechanism of Fermi level pinning by oxygen (passivation) and metals (Schottky barriers)Surface Science, 1979
- Effects of low oxygen exposures on the electronic surface properties of GaAs (110)Surface Science, 1979
- Electronic surface properties of III–V semiconductors: Excitonic effects, band-bending effects, and interactions with Au and O adsorbate layersJournal of Vacuum Science and Technology, 1976