Effects of low oxygen exposures on the electronic surface properties of GaAs (110)
- 1 February 1979
- journal article
- Published by Elsevier in Surface Science
- Vol. 80, 273-277
- https://doi.org/10.1016/0039-6028(79)90687-3
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Valence band studies of clean and oxygen exposed GaAs(100) surfacesSurface Science, 1978
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- Relaxation effects on the (110) surface of GaAsPhysical Review B, 1976
- Intrinsic and Defect-Induced Surface States of Cleaved GaAs(110)Physical Review Letters, 1976
- Semiconductor Surface Reconstruction: The Rippled Geometry of GaAs(110)Physical Review Letters, 1976
- Photoemission study of the adsorption of O2, CO and H2 on GaAs(110)Surface Science, 1976
- Surface states from photoemission threshold measurements on a clean, cleaved, Si (111) surfacePhysical Review B, 1975
- Adsorption of oxygen on clean cleaved (110) gallium-arsenide surfacesPhysical Review B, 1974