Uniform growth of InSb on GaAs in a rotating disk reactor by LP-MOVPE
- 1 November 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 124 (1-4) , 286-291
- https://doi.org/10.1016/0022-0248(92)90473-v
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- High-mobility InSb grown by organometallic vapor phase epitaxyApplied Physics Letters, 1991
- Effect of growth rate on properties of Ga0.51In0.49P grown by organometallic vapor phase epitaxyJournal of Crystal Growth, 1991
- Epitaxial growth of InSb on GaAs by metalorganic chemical vapor deposition {au}R. M. ,Biefeld andApplied Physics Letters, 1990
- The preparation of InAs1−xSbx alloys and strained-layer superlattices by MOCVDJournal of Crystal Growth, 1986
- The preparation of InSb and InAs1−x Sbx by metalorganic chemical vapor depositionJournal of Crystal Growth, 1986
- Heteroepitaxial molecular beam epitaxial InSb and room temperature operation of its metal-insulator-semiconductor field-effect transistorsJournal of Vacuum Science & Technology B, 1986
- p-n junction formation in InSb and InAs1−xSbx by metalorganic chemical vapor depositionApplied Physics Letters, 1985
- Growth of InSb and InAs1 − x Sb x by OM‐CVDJournal of the Electrochemical Society, 1984
- Properties of MBE grown InSb and InSb1−xBixJournal of Vacuum Science & Technology A, 1983
- Hybrid infrared focal-plane arraysIEEE Transactions on Electron Devices, 1982