Formation of radiative complex-centers by dual implantation of C+ and O+ ions into GaAs
- 1 April 1986
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 15 (1-6) , 765-769
- https://doi.org/10.1016/0168-583x(86)90408-8
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Observation of new common emissions in GaAs produced by ion implantation of four acceptor impuritiesApplied Physics Letters, 1986
- Photoluminescence of very dilutely C+ ion-implanted GaAsApplied Physics Letters, 1985
- New emission lines in highly carbon ion-implanted GaAsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- An optical characterization of defect levels induced by MBE growth of GaAsJournal of Vacuum Science & Technology B, 1983
- Low temperature photoluminescence of lightly Si-doped and undoped MBE GaAsJournal of Electronic Materials, 1982
- Photoluminescence of carbon-implanted GaAsApplied Physics Letters, 1981
- Luminescence and Excitation Spectra of Exciton Emission in GaAsPhysica Status Solidi (b), 1974