Punch-through in short-channel AlGaN/GaN HFETs
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- 23 January 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 53 (2) , 395-398
- https://doi.org/10.1109/ted.2005.862702
Abstract
Short-channel punch-through effects are demonstrated in 0.17 /spl mu/m gate length AlGaN/GaN single heterojunction field-effect transistors. These take the form of a high output conductance and the strong dependence of pinch-off voltage on drain voltage. It is shown by simulation that they can be explained by poor confinement of charge at the AlGaN/GaN interface resulting in current flow within the bulk of the GaN layer. This is caused by there being a concentration of only /spl sim/1.5/spl times/10/sup 16/ cm/sup -3/ deep levels in the insulating GaN buffer layer. It is found that a net acceptor density of around 10/sup 17/ cm/sup -3/ is required to ensure suppression of short-channel effects.Keywords
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