Development of a scanning minority-carrier transient spectroscopy technique with optical injection and full transient analysis
- 15 October 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (8) , 4031-4040
- https://doi.org/10.1063/1.342468
Abstract
A scanning minority-carrier transient spectroscopy with optical injection and full transient analysis is developed. The continuity equation is solved with adequate injection and boundary conditions in order to determine the optimum experimental conditions and the corresponding optimum spatial resolution. A numerical treatment is implemented which filters out the noise component of the transient, improving the sensitivity of the technique. It allows us to make a fit to the transient, to check its exponential character and to treat certain cases of nonexponential behavior. The technique is applied first to a step distribution of laser-induced defects and results can be obtained which are in good agreement with theoretical predictions. Finally, the gettering of gold to dislocations during a rapid thermal annealing is illustrated using this technique.This publication has 20 references indexed in Scilit:
- Process-induced and gold acceptor defects in siliconPhysical Review B, 1987
- Optical beam induced minority carrier distribution in semiconductorsPhysica Status Solidi (a), 1986
- Spatial Distribution of Dominant Electron and Hole Traps in Plastically Deformed GaAsPhysica Status Solidi (a), 1986
- Detection of Point Defect Inhomogeneities in III-V Semiconductors by Scanning-DLTSPhysica Status Solidi (a), 1986
- Diffusion of gold in dislocation-free or highly dislocated silicon measured by the spreading-resistance techniqueApplied Physics A, 1986
- A capacitance meter of high absolute sensitivity suitable for scanning DLTS applicationPhysica Status Solidi (a), 1982
- Recombination-Enhanced Interactions between Point Defects and Dislocation Climb in SemiconductorsPhysical Review Letters, 1979
- Temperature dependence of the optical properties of siliconJournal of Applied Physics, 1979
- Analysis of time-dependent fluorescence experiments by the method of modulating functions with special attention to pulse fluorometryChemical Physics, 1978
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974