Range profiles of medium and heavy ions implanted into SiO2

This publication has 10 references indexed in Scilit:

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  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
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• Energy loss of 4He ions in AI2O3 and SiO2
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
• Determination of the range profiles of boron implanted into Si and SiO2
  Physica Status Solidi (a), 1984
• Precise Profiles for Arsenic Implanted in Si and SiO₂ over a Wide Implantation Energy Range (10 keV–2.56 MeV)
  Japanese Journal of Applied Physics, 1982
• New projected range algorithm as derived from transport equations
  The European Physical Journal A, 1982
• Effective stopping-power charges of swift ions in condensed matter
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• Description of arsenic and boron profiles implanted in SiO2, Si3N4 and Si using Pearson distributions with four moments
  Nuclear Instruments and Methods, 1981
• A Monte Carlo computer program for the transport of energetic ions in amorphous targets
  Nuclear Instruments and Methods, 1980
• Range Distribution of Implanted Arsenic in Silicon Dioxide
  Japanese Journal of Applied Physics, 1977