De-embedding of on-wafer lightwave measurements performed on a monolithic 10 Gb/s InP receiver-oeic
- 1 October 1993
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 361-363
- https://doi.org/10.1109/euma.1993.336893
Abstract
Small-and large-signal measurements on 10 Gb/s monolithic receiver-OEICs of straight forward termination type consisting of InGaAs/InP pin-photodiodes and InAIAs/InGaAs/InP HEMTs are presented. On-wafer characterization of both, isolated devices and OEICs is perforrned using deembedding procedures, which allow for comparison of theoretical and experimental performance.Keywords
This publication has 7 references indexed in Scilit:
- On-wafer characterization, modelling, and optimization of InP-based HEMTs, PIN-photodiodes and monolithic receiver-OEICs for fiber-optic communicationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Integrated high speed pin-diode grown by LP-MOVPE on selectively etched substratesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 10 Gb/s high sensitivity, monolithically integrated p-i-n-HEMT optical receiverIEEE Photonics Technology Letters, 1993
- An ultra-high-speed optoelectronic integrated receiver for fiber-optic communicationsIEEE Transactions on Electron Devices, 1992
- Measurement and analysis of GaAs MESFET parasitic capacitancesIEEE Transactions on Microwave Theory and Techniques, 1991
- Bias dependence of the MODFET intrinsic model elements values at microwave frequenciesIEEE Transactions on Electron Devices, 1989
- A new method for determining the FET small-signal equivalent circuitIEEE Transactions on Microwave Theory and Techniques, 1988