Spectroscopic evidence that oxygen suppresses Si incorporation into vapor phase epitaxial InP
- 11 May 1987
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (19) , 1361-1363
- https://doi.org/10.1063/1.97856
Abstract
Photothermal ionization spectroscopy is employed to monitor the residual donor impurities in InP grown by vapor phase epitaxy, and study the effect of adding O2 to the carrier gas. The dominant donor species are found to be Si and S, irrespective of the O2 addition, and their concentrations are obtained with the aid of Hall measurements. The result shows that the O2 addition reduces the incorporation of Si into InP but does not affect the incorporation of S.Keywords
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