Surface processes in low pressure chemical vapour deposition
- 1 April 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 52, 199-206
- https://doi.org/10.1016/0022-0248(81)90194-9
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Caracterisation et comparaison par spectroscopie Auger et diffraction d'electrons lents de surfaces de silicium monocristallin, amorphe et hydrogeneApplications of Surface Science, 1980
- Structure and Stability of Low Pressure Chemically Vapor‐Deposited Silicon FilmsJournal of the Electrochemical Society, 1978
- Kinetics of Silicon Growth under Low Hydrogen PressureJournal of the Electrochemical Society, 1978
- Low Pressure Silicon EpitaxyJournal of the Electrochemical Society, 1977
- Influence of crystal structure on the luminescence of ions with s2 configurationJournal of Solid State Chemistry, 1977
- Hydrogen chemisorption on the silicon (110) 5×1 surfaceJournal of Vacuum Science and Technology, 1976
- Structures of Si Films Chemically Vapor-Deposited on Amorphous SiO2SubstratesJapanese Journal of Applied Physics, 1975
- The Kinetics of Silicon Deposition on Silicon by Pyrolysis of SilaneJournal of the Electrochemical Society, 1974
- Epitaxial Growth of Silicon from the Pyrolysis of Monosilane on Silicon SubstratesJournal of the Electrochemical Society, 1963
- The growth of crystals and the equilibrium structure of their surfacesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951