Asymmetric strain distributions resulting from deliberately induced misfit dislocations
- 8 January 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (2) , 140-142
- https://doi.org/10.1063/1.103054
Abstract
Misfit dislocations oriented in a specific 〈110〉 direction have been produced in strained Si1−xGex epitaxial layers deposited on Si(001), using sites of localized crystallographic damage as dislocation sources. During a high-temperature anneal, misfit dislocation propagation from a series of parallel saw lines oriented along a particular 〈110〉 direction led to asymmetrically strained material demonstrating an orthorhombic symmetry. Processing conditions required to maximize [110]/[11̄0] asymmetry in the strain distribution are discussed. The distance of a dislocation front emanating from the sites of crystallographic damage during a high-temperature anneal has been used to measure the misfit dislocation glide velocity.Keywords
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