Continuous Wave Operation of 1.55 µm GaInAsP/InP Laser with Semiconductor/Benzocyclobutene Distributed Bragg Reflector

Abstract
The room temperature CW operation of a 1.55 µm wavelength GaInAsP/InP laser with a deeply etched third-order Bragg reflector consisting of a semiconductor/Benzocyclobutene periodic structure was obtained for the first time. A threshold current as low as 13.5 mA and differential quantum efficiency of 28% for a cavity length of 330 µm and a stripe width of 5 µm was obtained with 10 elements of the Bragg reflector on one side.