Continuous Wave Operation of 1.55 µm GaInAsP/InP Laser with Semiconductor/Benzocyclobutene Distributed Bragg Reflector
- 1 November 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (11A) , L1240
- https://doi.org/10.1143/jjap.38.l1240
Abstract
The room temperature CW operation of a 1.55 µm wavelength GaInAsP/InP laser with a deeply etched third-order Bragg reflector consisting of a semiconductor/Benzocyclobutene periodic structure was obtained for the first time. A threshold current as low as 13.5 mA and differential quantum efficiency of 28% for a cavity length of 330 µm and a stripe width of 5 µm was obtained with 10 elements of the Bragg reflector on one side.Keywords
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