1.5 µm wavelength DBR lasers consisting of3λ/4-semiconductor and 3λ/4-groove buried with benzocyclobutene
- 5 August 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (16) , 1335-1337
- https://doi.org/10.1049/el:19990907
Abstract
1.5 µm wavelength GaInAsP/InP lasers with high reflectivity deeply etched DBR have been realised. Benzocyclobutene (BCB) polymer was buried in DBR grooves thus reducing the diffraction loss compared to that obtained using air/semiconductor grooves. The reflectivity was estimated to be 90% from the measurement of the threshold current dependence on the cavity length and the output power ratio from the front to the rear facets.Keywords
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