Short-cavity edge-emitting lasers with deeply etcheddistributed Bragg mirrors

21 January 1999

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 35 (2) , 154-155
https://doi.org/10.1049/el:19990133

Abstract

Short-cavity edge-emitting lasers with deeply etched distributed Bragg reflectors (DBRs) of third and second order were realised by reactive ion etching on GaInAs/AlGaAs layer structures. Diffraction limited reflectivities were achieved for third order dry etched DBR mirrors. Devices with DBRs on both cavity ends allow lasing operation for cavity lengths as short as 40 µm.

Keywords

This publication has 8 references indexed in Scilit:

High-temperature properties of GaInAs/AlGaAs lasers with improved carrier confinement by short-period superlattice quantum well barriers
Applied Physics Letters, 1998
Design studies for distributed Bragg reflectors for short-cavity edge-emitting lasers
IEEE Journal of Quantum Electronics, 1997
Edge-emitting lasers with short-period semiconductor/air distributed Bragg reflector mirrors
IEEE Photonics Technology Letters, 1997
0.98 µm multiquantum well tunnelling injectionlasers with ultra-high modulation bandwidths
Electronics Letters, 1996
A Novel Short-Cavity Laser with Deep-Grating Distributed Bragg Reflectors
Japanese Journal of Applied Physics, 1996
Low threshold current density operation of GaInAsP-InP laser with multiple reflector microcavities
IEEE Photonics Technology Letters, 1995
GaInAs/GaAs quantum wire laser structures with stronggaincoupling defined by reactive ion etching
Electronics Letters, 1995
Theory of gain, modulation response, and spectral linewidth in AlGaAs quantum well lasers
IEEE Journal of Quantum Electronics, 1985