Initial stage of epitaxial growth at the high temperature of GaAs and AlGaAs on Si by metalorganic chemical vapor deposition
- 18 March 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (11) , 1170-1172
- https://doi.org/10.1063/1.104354
Abstract
GaAs and AlGaAs grown directly on Si were characterized by transmission electron microscopy. Both GaAs and AlGaAs grow three-dimensionally on Si at 750 °C. The spacing between GaAs islands is large, while the AlGaAs islands appear to be contiguous for a nominal thickness of 22.5 nm. There is a high density of dislocations, stacking faults, and microtwins in the thin GaAs layer, but drastic reduction of such defects was observed in the planar AlGaAs nucleation layer.Keywords
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