Growth of Gaas on Si Using Algap Intermediate Layer
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Defect reduction effects in GaAs on Si substrates by thermal annealingApplied Physics Letters, 1988
- Effectiveness of AlGaAs/GaAs superlattices in reducing dislocation density in GaAs on SiJournal of Crystal Growth, 1988
- Six-Inch Diameter GaAs on Si WafersMRS Proceedings, 1988
- MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layersElectronics Letters, 1984