Buried Oxide in Silicon by Oxygen Implantation Into Scanned Wafers
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Effects of implantation temperature on the properties of buried oxide layers in silicon formed by oxygen ion implantationApplied Physics Letters, 1984
- Characterization of buried SiO2 layers formed by ion implantation of oxygenJournal of Electronic Materials, 1984
- The preparation of cross‐section specimens for transmission electron microscopyJournal of Electron Microscopy Technique, 1984
- Microstructural defects in laser recrystallized, graphite strip heater recrystallized and buried oxide silicon-on-insulator systems: A status reportJournal of Crystal Growth, 1983
- A Review of Silicon-On-Insulator Formation by Oxygen Ion ImplantationMRS Proceedings, 1983