Temperature effects for current transport in resonant tunneling structures
- 18 February 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (7) , 738-740
- https://doi.org/10.1063/1.104532
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- InAs/AlSb double-barrier structure with large peak-to-valley current ratio: a candidate for high-frequency microwave devicesIEEE Electron Device Letters, 1990
- Resonant tunneling of variously strained Si/GexSi1−x/Si heterostructuresSuperlattices and Microstructures, 1989
- High-Speed Resonant-Tunneling DiodesPublished by SPIE-Intl Soc Optical Eng ,1988
- Al 0.48 In 0.52 As/Ga 0.47 In 0.53 As resonant tunnelling diodes with large current peak/valley ratioElectronics Letters, 1988
- Quantum Well Width Dependence of Negative Differential Resistance of In0.52Al0.48As/In0.53Ga0.47As Resonant Tunneling Barriers Grown by MBEJapanese Journal of Applied Physics, 1987
- Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBEJapanese Journal of Applied Physics, 1986
- Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applicationsIEEE Journal of Quantum Electronics, 1986
- Dependence of resonant tunneling current on well widths in AlAs/GaAs/AlAs double barrier diode structuresApplied Physics Letters, 1986
- Room Temperature Observation of Differential Negative Resistance in an AlAs/GaAs/AlAs Resonant Tunneling DiodeJapanese Journal of Applied Physics, 1985
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974