Material-specific mapping of metal/semiconductor/dielectric nanosystems at 10 nm resolution by backscattering near-field optical microscopy
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- 7 January 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (1) , 25-27
- https://doi.org/10.1063/1.1428767
Abstract
We report that three main constituents of nanosystems—metals, semiconductors, and dielectrics—can be categorically distinguished by their specific optical near-field contrast at 633 nm wavelength. The decisive property is the local dielectric constant as we show by calculations based on dipolar coupling theory. Experiments with Au/Si/PS(polystyrene) nanostructures using an apertureless scattering-type near-field optical microscope yield optical images at 10 nm resolution, with clear material contrast close to predicted levels.Keywords
This publication has 16 references indexed in Scilit:
- Infrared conductivity mapping for nanoelectronicsApplied Physics Letters, 2000
- Spectroscopy of the anharmonic cantilever oscillations in tapping-mode atomic-force microscopyApplied Physics Letters, 2000
- Complex Optical Constants on a Subwavelength ScalePhysical Review Letters, 2000
- Enhanced dielectric contrast in scattering-type scanning near-field optical microscopyOptics Communications, 2000
- Artifact-free near-field optical imaging by apertureless microscopyApplied Physics Letters, 2000
- Material contrast in scanning near-field optical microscopy at 1–10 nm resolutionPhysical Review B, 1997
- Infrared-reflection-mode near-field microscopy using an apertureless probe with a resolution of λ/600Optics Letters, 1996
- Scanning Interferometric Apertureless Microscopy: Optical Imaging at 10 Angstrom ResolutionScience, 1995
- Near-field scanning optical microscope with a metallic probe tipOptics Letters, 1994
- Surface-enhanced optical microscopyJournal of the Optical Society of America B, 1985