Hot carrier induced photon emission in submicron GaAs devices

This publication has 8 references indexed in Scilit:

• Impact ionization, recombination, and visible light emission in AlGaAs/GaAs high electron mobility transistorsa)
  Journal of Applied Physics, 1991
• The evaluation of the activation energy of interface state generation by hot-electron injection
  IEEE Transactions on Electron Devices, 1991
• Extended (1.1-2.9 eV) hot-carrier-induced photon emission in n-channel Si MOSFETs
  IEEE Electron Device Letters, 1991
• Correlation between impact ionisation, recombination and visible light emission in GaAs MESFETs
  Electronics Letters, 1991
• Impact ionization phenomena in AlGaAs/GaAs HEMTs
  IEEE Transactions on Electron Devices, 1991
• Mechanisms for the emission of visible light from GaAs field-effect transistors
  Applied Physics Letters, 1990
• Impact ionization in GaAs MESFETs
  IEEE Electron Device Letters, 1990
• A simple method to characterize substrate current in MOSFET's
  IEEE Electron Device Letters, 1984