Dislocation-related photoluminescence in Si1−xGex/Si(100) grown by molecular beam epitaxy
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 920-924
- https://doi.org/10.1016/0022-0248(91)91108-m
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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