Epitaxial Growth of GaN1-xPx (x \lesssim0.04) on Sapphire Substrates
- 1 October 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (10A) , L792
- https://doi.org/10.1143/jjap.24.l792
Abstract
Gallium nitride phosphide (GaN1-x P x ) was epitaxially deposited on (0001) sapphire substrates by the vapor phase reaction of the Ga-NH3-PCl3-N2 system. The growth rate was 0.80 µm/hr at 1100°C and decreased with decreasing growth temperature. Composition x increased with decreasing growth temperature. The maximum composition x obtained was about 0.04 at 1050°C.Keywords
This publication has 5 references indexed in Scilit:
- Growth and properties of AlxGa1–xN epitaxial layersPhysica Status Solidi (a), 1978
- Influence of Deposition Temperature on Composition and Growth Rate of GaAsx P1−x LayersJournal of Applied Physics, 1972
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969
- Preparation and Structural Properties of GaN Thin FilmsJournal of Vacuum Science and Technology, 1969
- Vapor Growth of GaP on GaAs SubstratesJournal of Applied Physics, 1965