Measurement of resistivity and mobility in silicon epitaxial layers on a control wafer
- 1 March 1966
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 9 (3) , 203-211
- https://doi.org/10.1016/0038-1101(66)90105-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Measurement of resistivity of silicon epitaxial layers by the three-point probe techniqueSolid-State Electronics, 1965
- Semiconductor sheet resistivity measurements on square samplesJournal of Scientific Instruments, 1964
- Impurity Distribution in Epitaxial Silicon FilmsJournal of the Electrochemical Society, 1962
- Hall and Drift Mobility in High-Resistivity Single-Crystal SiliconPhysical Review B, 1957
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954
- Hall Mobility of Electrons and Holes in SiliconPhysical Review B, 1954