Measurement of resistivity of silicon epitaxial layers by the three-point probe technique
- 1 February 1965
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 8 (2) , 165-174
- https://doi.org/10.1016/0038-1101(65)90047-x
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- A Novel Four-Point Probe for Epitaxial and Bulk Semiconductor Resistivity MeasurementsJournal of the Electrochemical Society, 1963
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962
- Impurity Distribution in Epitaxial Silicon FilmsJournal of the Electrochemical Society, 1962
- Anomalous Impurity Diffusion in Epitaxial Silicon near the SubstrateJournal of the Electrochemical Society, 1962
- The Avalanche Breakdown Voltage of Narrow p + νn + Diodes†Journal of Electronics and Control, 1958
- Ionization Rates for Holes and Electrons in SiliconPhysical Review B, 1957
- Electron Multiplication in Silicon and GermaniumPhysical Review B, 1953