Acoustic-phonon scattering in modulation-doped heterostructures

We use recently determined values of conduction- and valence-band edge deformation potentials to analyze two-dimensional electron and hole mobilities in $\frac{\mathrm{GaAs}}{{\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}}\mathrm{As}$ modulation-doped heterostructures. Contrary to the commonly accepted view, it is shown that a consistent description of low-temperature mobility can be given only if the short-range deformation potential scattering is not screened by free carriers.