The influence of the simultaneous action of several independent stochastic processes on the crater‐shape during sputter depth profiling
- 1 April 1983
- journal article
- Published by Wiley in Surface and Interface Analysis
- Vol. 5 (2) , 87-88
- https://doi.org/10.1002/sia.740050207
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- The depth dependence of the depth resolution in sputter profilingSurface and Interface Analysis, 1982
- The statistical sputtering contribution to resolution in concentration-depth profilesThin Solid Films, 1981
- Quantitative depth profiling in surface analysis: A reviewSurface and Interface Analysis, 1980
- Comment on “Evaluation of concentration-depth profiles by sputtering in SIMS and AES” by S. HofmannApplied Physics A, 1979
- Depth resolution in sputter profilingApplied Physics A, 1977
- Theoretical and experimental aspects of secondary ion mass spectrometryVacuum, 1974