Broadband long-wavelength operation (9700 Å≳λ≳8700 Å) of AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure lasers in an external grating cavity

Abstract
Data are presented on pn AlyGa1−yAs‐ GaAs‐InxGa1−xAs quantum well heterostructure lasers showing that the large band filling range of a combined GaAs‐InxGa1−xAs quantum well makes possible a very large tuning range in external grating operation. Continuous 300 K laser operation is demonstrated in the 8696–9711 Å range (Δλ∼1000 Å, Δℏω∼150 meV) and pulsed operation in the 8450–9756 Å range (Δλ∼1300 Å, Δℏω∼200 meV). The band filling and gain profile are shown to be continuous from the InxGa1−xAs quantum well (Lz ∼125 Å, x∼0.2) up into the surrounding GaAs quantum well (Lz ∼430 Å).