Optically pumped GaSb/Al0.6Ga0.4Sb multiquantum well lasers operating in the λ=1.5–1.6 μm region
- 1 March 1984
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (5) , 1413-1415
- https://doi.org/10.1063/1.333233
Abstract
Multiquantum well structures of GaSb/Al0.6Ga0.4Sb were grown by molecular beam epitaxy and their spontaneous and stimulated emission properties were studied. The luminescence spectra exhibited high efficiency with the upward energy shift from λ=1.72 μm of GaSb up to λ=1.31 μm for the well width of ∼40 Å. Optically induced lasing has been obtained at the wavelength as short as λ=1.207 μm at 80 K and in the spectral region of λ=1.5–1.6 μm at temperatures as high as 80 °C. The optical thresholds of the quantum well lasers are similar to that of the more conventional GaSb/AlGaSb heterostructures.This publication has 14 references indexed in Scilit:
- GaSb/AlSb multiquantum well structures: Molecular beam epitaxial growth and narrow-well photoluminescenceApplied Physics Letters, 1983
- 1.5–1.6-μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxyApplied Physics Letters, 1983
- Continuous 300-K laser operation of strained superlatticesApplied Physics Letters, 1983
- Molecular-beam epitaxially grown 1.3 μm GaInAsP/InP double-heterostructure lasersElectronics Letters, 1982
- A GaAsxP1−x/GaP strained-layer superlatticeApplied Physics Letters, 1982
- Superlattice band structure in the envelope-function approximationPhysical Review B, 1981
- Clustering and phonon effects in AlxGa1−xAsGaAs quantum-well heterostructure lasers grown by molecular beam epitaxySolid State Communications, 1981
- Device characteristics of (AlGa)As multiquantum-well heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1981
- Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasersJournal of Applied Physics, 1980
- Reliability of vapor-grown InGaAs and InGaAsP heterojunction laser structuresIEEE Journal of Quantum Electronics, 1979