High-performance, graded AlGaAs injector, GaAs Gunn diodes at 94 GHz
- 1 July 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (7) , 288-290
- https://doi.org/10.1109/55.29655
Abstract
The advantages of using AlGaAs layers of graded Al composition to engineer the cathode of a GaAs Gunn diode are discussed. The specific target of high power operation (68 mW at room temperature) at 94 GHz over a wide range (>1.4 V) of voltage bias has been achieved. Other advantages of the cathode structure are briefly discussed.Keywords
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