Identification of Interstitial Carbon Related Defects in Silicon
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- A model for radiation damage effects in carbon-doped crystalline siliconSemiconductor Science and Technology, 1987
- Interstitial defect reactions in siliconApplied Physics Letters, 1987
- The diffusion coefficient of interstitial carbon in siliconSemiconductor Science and Technology, 1987
- Configurationally multistable defect in siliconApplied Physics Letters, 1986
- On the Nature of the Interstitial Defect with EC −0.16 eV Level in Irradiated SiliconPhysica Status Solidi (a), 1986
- Defect production and lifetime control in electron and γ-irradiated siliconJournal of Applied Physics, 1982
- Transient capacitance studies of an electron trap at E c−E T = 0.105 eV in phosphorus-doped siliconJournal of Applied Physics, 1982
- EPR Observation of the Isolated Interstitial Carbon Atom in SiliconPhysical Review Letters, 1976
- EPR of a Jahn-Teller distorted (111) carbon interstitialcy in irradiated siliconPhysical Review B, 1974
- Low temperature electron irradiation of silicon containing carbonSolid State Communications, 1970