Liquid phase epitaxial growth of GaInP/AlGaAs double heterostructures for visible lasers
- 1 March 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 66 (2) , 309-316
- https://doi.org/10.1016/0022-0248(84)90213-6
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- GaxIn1−xP Liquid phase epitaxial growth on (001), (111)a, and (111)b GaAs substratesJournal of Crystal Growth, 1983
- GaInAsP-InP Double Heterostructure Lasers Prepared by a New LPE ApparatusJapanese Journal of Applied Physics, 1976
- Pulsed room-temperature operation of In1−xGaxP1−zAsz double heterojunction lasers at high energy (6470 Å, 1.916 eV)Applied Physics Letters, 1976
- GaxIn1−xP−GayAl1−yAs heterojunction close−confinement injection laserApplied Physics Letters, 1975
- Successful liquid phase epitaxial growth and optically pumped laser operation of In0.5Ga0.5P–Ga0.4Al0.6As double-heterostructure materialApplied Physics Letters, 1974