GaxIn1−xP Liquid phase epitaxial growth on (001), (111)a, and (111)b GaAs substrates
- 1 June 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 62 (1) , 67-74
- https://doi.org/10.1016/0022-0248(83)90009-x
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Optically pumped laser action at 77 K of InGaP/InGaAlP double heterostructures grown by MBEElectronics Letters, 1982
- Visible-spectrum multiple-quantum-well In1−x′Gax′P1−z′Asz′- In1−xGaxP1−zAsz (x≳x′, z≳z′) heterostructure lasersJournal of Applied Physics, 1980
- Optically pumped laser action at 77 K in GaAs/GaInP double heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1980
- Single thin-active-layer visible-spectrum In1−xGaxP1−zAsz heterostructure lasersJournal of Applied Physics, 1978
- GaxIn1−xP−GayAl1−yAs heterojunction close−confinement injection laserApplied Physics Letters, 1975
- Room-temperature heterojunction laser diodes from vapor-grown In1−xGaxP/GaAs structuresApplied Physics Letters, 1974
- Successful liquid phase epitaxial growth and optically pumped laser operation of In0.5Ga0.5P–Ga0.4Al0.6As double-heterostructure materialApplied Physics Letters, 1974
- Luminescence, laser, and carrier-lifetime behavior of constant-temperature LPE In1−x Gax P (x=0.52) grown on (100) GaAsApplied Physics Letters, 1974
- Liquid phase epitaxial growth of GaxIn1−xPJournal of Electronic Materials, 1972
- Growth of In[sub (1−x)]Ga[sub x]P p-n Junctions by Liquid Phase EpitaxyJournal of the Electrochemical Society, 1971