Interface effects with Ga0.47In0.53As layers on InP substrates prepared by organometallic chemical vapor deposition
- 1 June 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 104 (1) , 145-152
- https://doi.org/10.1016/0040-6090(83)90555-2
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Factors Influencing the Growth of Ga0.47In0.53As on InP Substrates Using the Metalorganic ProcessJournal of the Electrochemical Society, 1982
- Saturation velocity determination for In0.53Ga0.47As field-effect transistorsApplied Physics Letters, 1981
- Comparative potential performance of Si, GaAs, GaInAs, InAs submicrometer-gate FET'sIEEE Transactions on Electron Devices, 1980
- Double heterostructure Ga0.47In0.53As MESFETs with submicron gatesIEEE Electron Device Letters, 1980
- Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON B InPJournal of Electronic Materials, 1980
- Ga0.47In0.53As: A ternary semiconductor for photodetector applicationsIEEE Journal of Quantum Electronics, 1980
- Ga
x
In
1−
x
As
y
P
1−
y
/InP d.h. laser emitting at 1.15 μm grown by low-pressure metalorganic c.v.d.Electronics Letters, 1980
- Observation of etch pits produced in InP by new etchantsJournal of Crystal Growth, 1979
- Growth of Ga y In1 − y As / InP Heterostructures by Molecular Beam EpitaxyJournal of the Electrochemical Society, 1978
- Vapor‐Phase Etching and Polishing of GaAs Using Arsenic TrichlorideJournal of the Electrochemical Society, 1977